STGW45NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGW45NC60VD Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
270W
Base Part Number
STGW45
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Power Dissipation
270W
Input Type
Standard
Turn On Delay Time
33 ns
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
178 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
90A
Reverse Recovery Time
45ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.4V
Turn On Time
46 ns
Test Condition
390V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Turn Off Time-Nom (toff)
366 ns
Gate Charge
126nC
Current - Collector Pulsed (Icm)
220A
Td (on/off) @ 25°C
33ns/178ns
Switching Energy
333μJ (on), 537μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STGW45NC60VD Product Details
STGW45NC60VD Description
The STGW45NC60VD is a 45 A - 600 V - very fast IGBT utilizes the advanced Power MESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. This IGBT makes excellent use of the cutting-edge PowerMESH? technology to balance switching performance and minimal on-state behavior.
STGW45NC60VD Features
Low CRES / CIES ratio (no cross conduction susceptibility)
IGBT co-packaged with ultra fast free-wheeling diode
0.63°C/W IGBT thermal resistance, junction to case