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STGW45NC60VD

STGW45NC60VD

STGW45NC60VD

STMicroelectronics

STGW45NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW45NC60VD Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 270W
Base Part Number STGW45
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 270W
Input Type Standard
Turn On Delay Time 33 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 178 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 90A
Reverse Recovery Time 45ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Turn On Time 46 ns
Test Condition 390V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Turn Off Time-Nom (toff) 366 ns
Gate Charge 126nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 33ns/178ns
Switching Energy 333μJ (on), 537μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
STGW45NC60VD Product Details

STGW45NC60VD Description


The STGW45NC60VD is a 45 A - 600 V - very fast IGBT utilizes the advanced Power MESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. This IGBT makes excellent use of the cutting-edge PowerMESH? technology to balance switching performance and minimal on-state behavior.



STGW45NC60VD Features


  • Low CRES / CIES ratio (no cross conduction susceptibility)

  • IGBT co-packaged with ultra fast free-wheeling diode

  • 0.63°C/W IGBT thermal resistance, junction to case

  • 1.5°C/W IGBT thermal resistance, junction to case

  • 50°C/W Thermal resistance, junction to ambient

  • High current capability

  • High frequency operation up to 50KHz

  • Very soft ultra fast recovery anti-parallel diode

  • ±20V Gate to emitter voltage



STGW45NC60VD Applications


  • Induction heating

  • High frequency inverters

  • UPS

  • Power Management

  • Motor Drive & Control


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