RJH60A83RDPD-A0#J2

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Manufacturer part number:RJH60A83RDPD-A0#J2

Manufacturer:Renesas Electronics America

Description:Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) TO-252A T/R

Case Package:SOT-23

Datasheet:RJH60A83RDPD-A0#J2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	51W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Element Configuration	Single
Input Type	Standard
Power - Max	51W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Reverse Recovery Time	130 ns
Collector Emitter Breakdown Voltage	600V
Test Condition	300V, 10A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 10A
IGBT Type	Trench
Gate Charge	19.7nC
Td (on/off) @ 25°C	31ns/54ns
Switching Energy	230μJ (on), 160μJ (off)
RoHS Status	ROHS3 Compliant