IRG4PSH71KDPBF

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Manufacturer part number:IRG4PSH71KDPBF

Manufacturer:Infineon Technologies

Description:IRG4PSH71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PSH71KDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-274AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1999
JESD-609 Code	e3
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	350W
Peak Reflow Temperature (Cel)	250
Current Rating	78A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Single
Power Dissipation	350W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	84ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.9V
Max Collector Current	78A
Reverse Recovery Time	107 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.97V
Turn On Time	152 ns
Test Condition	800V, 42A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 42A
Turn Off Time-Nom (toff)	660 ns
Gate Charge	410nC
Current - Collector Pulsed (Icm)	156A
Td (on/off) @ 25°C	67ns/230ns
Switching Energy	5.68mJ (on), 3.23mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	190ns
Height	20.8mm
Length	16.0782mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free