IKA10N65ET6XKSA2 Description

The IKA10N65ET6XKSA2 is an IGBT in trench and field-stop technology with a soft, fast recovery anti-parallel Rapid diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal rather than drawing any input current. When a BJT's output portion is described as "bipolar," both charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

IKA10N65ET6XKSA2 Features

• Low gate charge QG

• Pb-free lead plating; RoHS compliant

• Very soft, fast recovery anti-parallel Rapid diode

• Very low VCE(sat) 1.5V (typ.)

• Maximum junction temperature 175°C

• Short circuit withstand time 3μs

• Trench and field-stop technology for 650V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- low VCEsat and positive temperature coefficient

IKA10N65ET6XKSA2 Applications

• Drives

- GPD (general purpose drives)

• Major home appliances

- Air conditioning

• Other major home appliances

• Small home appliances

- Other small home appliances