IKW15T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IKW15T120FKSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
110W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
140ns
JEDEC-95 Code
TO-247AC
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
30A
Turn On Time
85 ns
Test Condition
600V, 15A, 56 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 15A
Turn Off Time-Nom (toff)
720 ns
IGBT Type
NPT, Trench Field Stop
Gate Charge
85nC
Current - Collector Pulsed (Icm)
45A
Td (on/off) @ 25°C
50ns/520ns
Switching Energy
2.7mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$16.718326
$16.718326
10
$15.772005
$157.72005
100
$14.879250
$1487.925
500
$14.037029
$7018.5145
1000
$13.242480
$13242.48
IKW15T120FKSA1 Product Details
IKW15T120FKSA1 Description
IKW15T120FKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKW15T120FKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKW15T120FKSA1 has the common source configuration.