IKW25N120T2FKSA1

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Manufacturer part number:IKW25N120T2FKSA1

Manufacturer:Infineon Technologies

Description:IKW25N120T2FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKW25N120T2FKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2008
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	349W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	195ns
JEDEC-95 Code	TO-247AD
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	50A
Turn On Time	49 ns
Test Condition	600V, 25A, 16.4 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 25A
Turn Off Time-Nom (toff)	504 ns
IGBT Type	Trench
Gate Charge	120nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	27ns/265ns
Switching Energy	2.9mJ
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$12.727980	$12.72798
10	$12.007528	$120.07528
100	$11.327857	$1132.7857
500	$10.686657	$5343.3285
1000	$10.081752	$10081.752

IKW25N120T2FKSA1 Description

The IKW25N120T2FKSA1 is a Low Loss DuoPack: IGBT in 2nd generation TrenchStop? with soft, fast recovery anti-parallel Emitter Controlled Diode. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current.

IKW25N120T2FKSA1 Features

Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Short circuit withstand time – 10 μs
Designed for :

- Frequency Converters

- Uninterrupted Power Supply

TrenchStop?2nd generation for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

Easy paralleling capability due to positive temperature coefficient in VCE(sat)

IKW25N120T2FKSA1 Applications

It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
It is used in UPS (Uninterruptible Power Supply) system.
It is used in AC and DC motor drives offering speed control.
It is used in chopper and inverters.
It is used in solar inverters.