IKW30N60TFKSA1                  Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

IKW30N60TFKSA1                Features

· Very low VCE(sat) 1.5V (typ.)

· Maximum Junction Temperature 175°C

· Short circuit withstand time 5ms

· Designed for :

- Frequency Converters

- Uninterruptible Power Supply

· TRENCHSTOP? and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

· Positive temperature coefficient in VCE(sat)

· Low EMI

· Low Gate Charge

· Very soft, fast recovery anti-parallel Emitter Controlled HE diode

· Qualified according to JEDEC1

for target applications

· Pb-free lead plating; RoHS compliant

IKW30N60TFKSA1                APPLICATIONS

Power for processors, ASICS, FPGAs, and RF chipsets

Portable instrumentation and medical devices

Space constrained devices