STGY50NC60WD

new-10%

Manufacturer part number:STGY50NC60WD

Manufacturer:STMicroelectronics

Description:STGY50NC60WD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGY50NC60WD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	278W
Base Part Number	STGY50
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	260W
Input Type	Standard
Turn On Delay Time	52 ns
Power - Max	278W
Transistor Application	POWER CONTROL
Rise Time	17ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	240 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	110A
Reverse Recovery Time	55 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	69 ns
Test Condition	390V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 40A
Turn Off Time-Nom (toff)	271 ns
Gate Charge	195nC
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	52ns/240ns
Switching Energy	365μJ (on), 560μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	20.3mm
Length	15.9mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free