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IKW40N65F5AXKSA1

IKW40N65F5AXKSA1

IKW40N65F5AXKSA1

Infineon Technologies

IKW40N65F5AXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW40N65F5AXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Series Automotive, AEC-Q101, TrenchStop™
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 74A
Reverse Recovery Time 73 ns
Collector Emitter Breakdown Voltage 650V
Turn On Time 30 ns
Test Condition 400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Turn Off Time-Nom (toff) 200 ns
IGBT Type Trench
Gate Charge 95nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 19ns/165ns
Switching Energy 350μJ (on), 100μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.565368 $6.565368
10 $6.193743 $61.93743
100 $5.843153 $584.3153
500 $5.512409 $2756.2045
1000 $5.200386 $5200.386
IKW40N65F5AXKSA1 Product Details

IKW40N65F5AXKSA1 Description


IKW40N65F5AXKSA1 is a single IGBT with a breakdown voltage of 600V from Infineon Technologies. IKW40N65F5AXKSA1 operates between -40°C~175°C TJ, and its maximum collector current is 74A. The IKW40N65F5AXKSA1 has 3 pins and it is available in a Tube packaging way. IKW40N65F5AXKSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.



IKW40N65F5AXKSA1 Features


  • Best-in-Class efficiency in hard switching and resonant topologies

  • 650V breakdown voltage

  • Low gate charge QG

  • IGBT copacked with RAPID 1 fast and soft antiparallel diode

  • Maximum junction temperature 175°C

  • Qualified according to AEC-Q101

  • Green package (RoHS compliant)



IKW40N65F5AXKSA1 Applications


  • Battery charger

  • DC/DC converter


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