IKW40N65F5AXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKW40N65F5AXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Series
Automotive, AEC-Q101, TrenchStop™
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
74A
Reverse Recovery Time
73 ns
Collector Emitter Breakdown Voltage
650V
Turn On Time
30 ns
Test Condition
400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
Turn Off Time-Nom (toff)
200 ns
IGBT Type
Trench
Gate Charge
95nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
19ns/165ns
Switching Energy
350μJ (on), 100μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.565368
$6.565368
10
$6.193743
$61.93743
100
$5.843153
$584.3153
500
$5.512409
$2756.2045
1000
$5.200386
$5200.386
IKW40N65F5AXKSA1 Product Details
IKW40N65F5AXKSA1 Description
IKW40N65F5AXKSA1 is a single IGBT with a breakdown voltage of 600V from Infineon Technologies. IKW40N65F5AXKSA1 operates between -40°C~175°C TJ, and its maximum collector current is 74A. The IKW40N65F5AXKSA1 has 3 pins and it is available in a Tube packaging way. IKW40N65F5AXKSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.
IKW40N65F5AXKSA1 Features
Best-in-Class efficiency in hard switching and resonant topologies
650V breakdown voltage
Low gate charge QG
IGBT copacked with RAPID 1 fast and soft antiparallel diode