NGB8204NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGB8204NT4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Lead (Sn80Pb20)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
400V
Max Power Dissipation
115W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
18A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
NGB8204
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Rise Time-Max
7000ns
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation
115W
Case Connection
COLLECTOR
Input Type
Logic
Transistor Application
AUTOMOTIVE IGNITION
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
18A
Collector Emitter Breakdown Voltage
430V
Turn On Time
5200 ns
Vce(on) (Max) @ Vge, Ic
2.5V @ 4V, 15A
Turn Off Time-Nom (toff)
13000 ns
Current - Collector Pulsed (Icm)
50A
Gate-Emitter Voltage-Max
18V
Gate-Emitter Thr Voltage-Max
1.9V
Fall Time-Max (tf)
15000ns
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.910667
$0.910667
10
$0.859120
$8.5912
100
$0.810491
$81.0491
500
$0.764614
$382.307
1000
$0.721334
$721.334
NGB8204NT4 Product Details
NGB8204NT4 Description
For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.
NGB8204NT4 Features
? Protection for integrated ESD diodes
? Unclamped Inductive Switching (UIS) Energy Per Area Increases with New Design
? Interface Power Loads to Logic or Microprocessor Devices with Low Threshold Voltage