IRGS4065PBF Description

This IGBT was created specifically for use in plasma display panels. In order to achieve low VCE(on) and low EPULSETM rating per silicon area, this device uses advanced trench IGBT technology, which increases panel efficiency. Operating junction temperature of 150 °C and high repeated peak current capacity are further features. These characteristics work together to make this IGBT a very effective, durable, and trustworthy device for PDP applications.

IRGS4065PBF Features

• Optimized for sustain and energy recovery circuits in PDP applications, advanced trench IGBT technology

• For increased panel efficiency, use low VCE(on) and energy per pulse (EPULSETM).

• High capacity for repeating peak current

• Lead-free packaging

IRGS4065PBF Applications

Switching applications