STGP35N35LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP35N35LZ Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Weight
2.299997g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
VOLTAGE CLAMPING
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
176W
Base Part Number
STGP35
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Logic
Turn On Delay Time
1.1 μs
Power - Max
176W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
26.5 μs
Collector Emitter Voltage (VCEO)
1.7V
Max Collector Current
40A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
345V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
7600 ns
Test Condition
300V, 15A, 5V
Vce(on) (Max) @ Vge, Ic
1.7V @ 4.5V, 15A
Turn Off Time-Nom (toff)
37000 ns
Gate Charge
49nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
1.1μs/26.5μs
Gate-Emitter Voltage-Max
12V
Gate-Emitter Thr Voltage-Max
2.3V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STGP35N35LZ Product Details
STGP35N35LZ Description
STGP35N35LZ developed by STMicroelctronics is a type of automotive-grade 345 V internally clamped IGBT designed based on the most advanced PowerMESH? technology. Overvoltage protection capabilities are delivered by the built-in Zener diodes between the gate collector and gate emitter. Based on its low on-state voltage drop and low threshold drive, the STGP35N35LZ IGBT is well suited for an automotive ignition system.