IXGP12N100AU1

new-10%

Manufacturer part number:IXGP12N100AU1

Manufacturer:IXYS

Description:IGBT 1000V 24A 100W TO220AB

Case Package:SOT-23

Datasheet:IXGP12N100AU1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED, FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Base Part Number	IXG*12N100
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1kV
Max Collector Current	24A
Reverse Recovery Time	60ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Turn On Time	100 ns
Test Condition	800V, 12A, 120 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 12A
Turn Off Time-Nom (toff)	900 ns
Gate Charge	65nC
Current - Collector Pulsed (Icm)	48A
Td (on/off) @ 25°C	100ns/850ns
Switching Energy	4mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	700ns
Radiation Hardening	No
RoHS Status	RoHS Compliant