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IKW40T120FKSA1

IKW40T120FKSA1

IKW40T120FKSA1

Infineon Technologies

IKW40T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW40T120FKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2006
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 270W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 240ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 75A
Turn On Time 92 ns
Test Condition 600V, 40A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Turn Off Time-Nom (toff) 700 ns
IGBT Type NPT, Trench Field Stop
Gate Charge 203nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 48ns/480ns
Switching Energy 6.5mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.51000 $10.51
30 $9.16200 $274.86
120 $8.05317 $966.3804
510 $7.10861 $3625.3911
1,020 $6.28725 $6.28725
IKW40T120FKSA1 Product Details

IKW40T120FKSA1 Description


The IKW40T120FKSA1 is an IGBT in TrenchStop and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode.



IKW40T120FKSA1 Features


  • Best in class TO247

  • Short circuit withstand time – 10μs

  • TrenchStop and Fieldstop technology for 1200 V applications offers

  • NPT technology offers easy parallel switching capability due to

  • positive temperature coefficient in VCE(sat)

  • Low EMI

  • Low Gate Charge

  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode

  • Qualified according to JEDEC1 for target applications

  • Pb-free lead plating; RoHS compliant



IKW40T120FKSA1 Applications


  • Frequency Converters

  • Uninterrupted Power Supply


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