IXBT16N170A

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IXBT16N170A

Manufacturer part number:IXBT16N170A

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.7KV 16A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXBT16N170A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2000
Series	BIMOSFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW SWITCHING LOSSES
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.7kV
Max Power Dissipation	150W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	16A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	150W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	15 ns
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	220 ns
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	16A
Reverse Recovery Time	360 ns
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Turn On Time	43 ns
Test Condition	1360V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 10A
Turn Off Time-Nom (toff)	370 ns
Gate Charge	65nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	15ns/160ns
Switching Energy	1.2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	100ns
Height	5.1mm
Length	16.05mm
Width	14mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free