FGY75T95LQDT Description

The FGY75T95LQDT is a Trench Field Stop 4th generation Low Vcesat IGBT co?packaged with a full current rated diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

FGY75T95LQDT Features

• Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A

• Fast Switching

• Tighten Parameter Distribution

• These Devices are Pb?Free and are RoHS Compliant

• Maximum Junction Temperature : TJ = 175℃

• Positive Temperature Co?efficient for Easy Parallel Operating

• High Current Capability

FGY75T95LQDT Applications

• Solar Inverter

• Switched Mode Power Supply

• Uninterruptible Power Supply

• Chopper and inverters

• AC and DC motor drives