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STGF30H60DF

  • STGF30H60DF
  • STGF30H60DF

STGF30H60DF

STGF30H60DF

STMicroelectronics

STGF30H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGF30H60DF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 37W
Base Part Number STGF30
Element Configuration Single
Power Dissipation 37W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 110 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 105nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 50ns/160ns
Switching Energy 350μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.334960 $0.33496
10 $0.316000 $3.16
100 $0.298113 $29.8113
500 $0.281239 $140.6195
1000 $0.265320 $265.32
STGF30H60DF Product Details

STGF30H60DF Description


The STGF30H60DF is a Trench gate field-stop 600 V, 30 A high-speed IGBT developed using an advanced proprietary trench gate field stop structure.



STGF30H60DF Features


  • High-speed switching

  • Tight parameters distribution

  • Safe paralleling

  • Low thermal resistance

  • Short circuit rated

  • Ultrafast soft recovery antiparallel diode



STGF30H60DF Applications


  • Inverter

  • UPS

  • PFC


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