IKW50N65H5AXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKW50N65H5AXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2013
Series
Automotive, AEC-Q101, TrenchStop™
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
270W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
270W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
80A
Reverse Recovery Time
58 ns
Collector Emitter Breakdown Voltage
650V
Turn On Time
33 ns
Test Condition
400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 50A
Turn Off Time-Nom (toff)
213 ns
IGBT Type
Trench
Gate Charge
116nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
21ns/173ns
Switching Energy
450μJ (on), 160μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.405923
$9.405923
10
$8.873513
$88.73513
100
$8.371238
$837.1238
500
$7.897395
$3948.6975
1000
$7.450372
$7450.372
IKW50N65H5AXKSA1 Product Details
IKW50N65H5AXKSA1 Description
IKW50N65H5AXKSA1 is a 650V High speed 5 IGBT in TRENCHSTOPTM 5 technology packed with RAPID 1 fast and soft antiparallel diode. The Infineon IKW50N65H5AXKSA1 can be applied in Solar converters, Uninterruptible power supplies, Welding converters, and Mid to high-range switching frequency converters due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor TPS65310AQRVJRQ1 is in the PG-TO247-3 package with 305W power dissipation.
IKW50N65H5AXKSA1 Features
Best-in-Class efficiency in hard switching and resonant topologies
Plug-and-play replacement of previous generation IGBTs
650V breakdown voltage
Low gate charge QG
IGBT packed with RAPID 1 fast and soft antiparallel diode
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications