IKW50N65H5FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKW50N65H5FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
305W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Power Dissipation
305W
Input Type
Standard
Collector Emitter Voltage (VCEO)
1.65V
Max Collector Current
80A
Reverse Recovery Time
57 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.65V
Test Condition
400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 50A
Gate Charge
120nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
21ns/180ns
Switching Energy
520μJ (on), 180μJ (off)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.52000
$5.52
10
$4.99300
$49.93
240
$4.15479
$997.1496
720
$3.58939
$2584.3608
1,200
$3.08245
$3.08245
IKW50N65H5FKSA1 Product Details
IKW50N65H5FKSA1 Description
The "Best-in-class" IKW50N65H5FKSA1 IGBT is redefined by Infineon's innovative TRENCHSTOPTM5 IGBT technology, which offers unrivaled performance in terms of efficiency for demanding switching applications. The new family represents a significant advance in IGBT innovation to meet the market's future high-efficiency requirements.
IKW50N65H5FKSA1 Features
Low COES/EOSS
Factor 2.5 lower Qg
Temperature stability of Vf
650V breakthrough voltage
200mV reduction in VCE(sat)
Factor 2 reduction in switching losses
Compared to Infineon’s Best-in-Class HighSpeed 3 family
Co-packed with Infineon’s new Rapid” Si-diode technology