STGW20V60DF

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Manufacturer part number:STGW20V60DF

Manufacturer:STMicroelectronics

Description:STGW20V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW20V60DF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	167W
Base Part Number	STGW20
Element Configuration	Single
Power Dissipation	167W
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	40ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.3V
Test Condition	400V, 20A, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 20A
IGBT Type	Trench Field Stop
Gate Charge	116nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	38ns/149ns
Switching Energy	200μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$16.245520	$16.24552
10	$15.325962	$153.25962
100	$14.458455	$1445.8455
500	$13.640052	$6820.026
1000	$12.867973	$12867.973

STGW20V60DF Description

This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. The component is an IGBT from the "V" series, which offers the best balance between conduction and switching losses to enhance the efficiency of very high frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very narrow parameter distribution.