AFGHL50T65SQDC Description
:
The AFGHL50T65SQDC is a hybrid IGBT with a silicon carbide base and an isolated high current IGBT gate driver. It uses a unique 4th generation field-stop IGBT and 1.5th generation SiC Schottky diode technology to deliver low conduction and switching losses for a wide range of power applications, including totem-based Bridgeless Power Factor Correction (PFC) and inverter for columns.

AFGHL50T65SQDC Features
:
? AEC?Q101 Qualified
? Maximum Junction Temperature : TJ = 175°C
? Positive Temperature Co?efficient for Easy Parallel Operating
? High Current Capability
? Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @IC = 50 A
? Fast Switching
? Tighten Parameter Distribution
? No Reverse Recovery/No Forward Recovery

AFGHL50T65SQDC Applications
:
? Automotive
? On & Off Board Chargers
? DC?DC Converters
? PFC
? Industrial Inverter