IKY40N120CH3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKY40N120CH3XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-4
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Input Type
Standard
Power - Max
500W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
350ns
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
80A
Turn On Time
61 ns
Test Condition
600V, 40A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 40A
Turn Off Time-Nom (toff)
439 ns
Gate Charge
190nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
30ns/280ns
Switching Energy
2.18mJ (on), 1.3mJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.24000
$11.24
10
$10.23200
$102.32
240
$8.60846
$2066.0304
720
$7.59879
$5471.1288
1,200
$6.72080
$6.7208
IKY40N120CH3XKSA1 Product Details
IKY40N120CH3XKSA1 Description
IKY40N120CH3XKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKY40N120CH3XKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKY40N120CH3XKSA1 has the common source configuration.