IKY75N120CS6XKSA1                           Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

IKY75N120CS6XKSA1                           Features

1200VTRENCHSTOPIGBT6 technology offering:

·High efficiency in hard switching and resonant topologies·Easy paralleling capability due to positive temperature coefficient in VcEsat·Low EMI

·Low Gate Charge Qg

.Very soft.fast recovery full current anti-parallel diode Maximumjunction temperature 175°C·Pb-free lead plating: RoHS compliant

Complete product spectrum and PSpice

IKY75N120CS6XKSA1                           Applications

·Industrial UPS·Charger

·Energy storage

·Three-level Solar String Inverter

·Welding