IPA60R170CFD7XKSA1 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1199pF @ 400V.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 51A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IPA60R170CFD7XKSA1 Features

the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 51A.
a 650V drain to source voltage (Vdss)

IPA60R170CFD7XKSA1 Applications

There are a lot of Infineon Technologies
IPA60R170CFD7XKSA1 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools