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IRLML0040TRPBF

IRLML0040TRPBF

IRLML0040TRPBF

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 56m Ω @ 3.6A, 10V ±16V 266pF @ 25V 3.9nC @ 4.5V TO-236-3, SC-59, SOT-23-3

SOT-23

IRLML0040TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 56MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 5.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 56m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 266pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 4.5V
Rise Time 5.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 4.3 ns
Turn-Off Delay Time 6.4 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Nominal Vgs 1.8 V
Height 1.016mm
Length 3.0226mm
Width 1.397mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
IRLML0040TRPBF Product Details

IRLML0040TRPBF Overview


The maximum input capacitance of this device is 266pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.6A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 6.4 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.1 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.8V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IRLML0040TRPBF Features


a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 6.4 ns
a threshold voltage of 1.8V


IRLML0040TRPBF Applications


There are a lot of Infineon Technologies
IRLML0040TRPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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