IXFT60N25Q

new-10%

Manufacturer part number:IXFT60N25Q

Manufacturer:IXYS

Description:Trans MOSFET N-CH 250V 60A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXFT60N25Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	360W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	47m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.047Ohm
Drain to Source Breakdown Voltage	250V
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	RoHS Compliant