IPB107N20N3GATMA1

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IPB107N20N3GATMA1

Manufacturer part number:IPB107N20N3GATMA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10.7m Ω @ 88A, 10V ±20V 7100pF @ 100V 87nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Package:SOT-23

Datasheet:IPB107N20N3GATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	OptiMOS™
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.7m Ω @ 88A, 10V
Vgs(th) (Max) @ Id	4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds	7100pF @ 100V
Current - Continuous Drain (Id) @ 25°C	88A Tc
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	88A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	560 mJ
Max Junction Temperature (Tj)	175°C
Height	4.7mm
RoHS Status	ROHS3 Compliant