TPW4R50ANH,L1Q datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
TPW4R50ANH,L1Q Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Series
U-MOSVIII-H
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Number of Channels
1
Power Dissipation-Max
800mW Ta 142W Tc
Turn On Delay Time
25 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4.5m Ω @ 46A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
5200pF @ 50V
Current - Continuous Drain (Id) @ 25°C
92A Tc
Gate Charge (Qg) (Max) @ Vgs
58nC @ 10V
Rise Time
9.6ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
52 ns
Continuous Drain Current (ID)
92A
Gate to Source Voltage (Vgs)
20V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$1.14800
$5.74
TPW4R50ANH,L1Q Product Details
TPW4R50ANH,L1Q Description
The TPW4R50ANH, L1Q is a MOSFET Silicon N-channel MOS (U-MOS Ⅷ-H). Impact of Metal Oxide and Silicon Field Transistors also referred to as MOSFETs, are electronic components used in circuits to switch or amplify voltages. It has three terminals and is a voltage-controlled device.