TPW4R50ANH,L1Q

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TPW4R50ANH,L1Q

Manufacturer part number:TPW4R50ANH,L1Q

Manufacturer:Toshiba Semiconductor and Storage

Description:TPW4R50ANH,L1Q datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:TPW4R50ANH,L1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	U-MOSVIII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	800mW Ta 142W Tc
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5m Ω @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 50V
Current - Continuous Drain (Id) @ 25°C	92A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	9.6ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	52 ns
Continuous Drain Current (ID)	92A
Gate to Source Voltage (Vgs)	20V
RoHS Status	RoHS Compliant