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IXTQ36P15P

IXTQ36P15P

IXTQ36P15P

IXYS

MOSFET (Metal Oxide) P-Channel Tube 110m Ω @ 18A, 10V ±20V 3100pF @ 25V 55nC @ 10V 150V TO-3P-3, SC-65-3

SOT-23

IXTQ36P15P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PolarP™
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 31ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.11Ohm
Drain to Source Breakdown Voltage -150V
Pulsed Drain Current-Max (IDM) 90A
Avalanche Energy Rating (Eas) 1500 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.68000 $5.68
30 $4.56767 $137.0301
120 $4.16150 $499.38
510 $3.36980 $1718.598
1,020 $2.84200 $2.842
IXTQ36P15P Product Details

IXTQ36P15P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 36A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -150V, and this device has a drainage-to-source breakdown voltage of -150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.Peak drain current is 90A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTQ36P15P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 90A.
a 150V drain to source voltage (Vdss)


IXTQ36P15P Applications


There are a lot of IXYS
IXTQ36P15P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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