IXTQ36P15P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 36A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -150V, and this device has a drainage-to-source breakdown voltage of -150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.Peak drain current is 90A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTQ36P15P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 90A.
a 150V drain to source voltage (Vdss)
IXTQ36P15P Applications
There are a lot of IXYS
IXTQ36P15P applications of single MOSFETs transistors.
- AC-DC Power Supply
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- Synchronous Rectification for ATX 1 Server I Telecom PSU
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- Motor drives and Uninterruptible Power Supplies
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- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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- Synchronous Rectification
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- Battery Protection Circuit
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- Telecom 1 Sever Power Supplies
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