IPB120N08S403ATMA1

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Manufacturer part number:IPB120N08S403ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R

Case Package:SOT-23

Datasheet:IPB120N08S403ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	278W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 223μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	11550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	167nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Drain-source On Resistance-Max	0.0025Ohm
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	920 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead