FDFS6N754 Description
The FDFS6N754 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
FDFS6N754 Features
Max rDS(on) = 56m|? at VGS = 0V, ID= 4A
Max rDS(on) = 75m|? at VGS= 4.5V, ID = 3.5A
VF 0.45V @ 2A
VF 0.28V @ 100mA
Schottky and MOSFET incorporated into single power surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout for design flexibility
Low Gate Charge (Qg = 4nC)
Low Miller Charge
FDFS6N754 Applications
Inverter
Synchronous Rectifier
