SI1400DL-T1-GE3

new-10%

Manufacturer part number:SI1400DL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 1.6A SC-70-6

Case Package:SOT-23

Datasheet:SI1400DL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	7.512624mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	568mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	568mW
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	150m Ω @ 1.7A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Rise Time	30ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	1.6A
Gate to Source Voltage (Vgs)	12V
DS Breakdown Voltage-Min	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant