IPB180N06S4H1ATMA2

new-10%

Manufacturer part number:IPB180N06S4H1ATMA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 180A TO263-7

Case Package:SOT-23

Datasheet:IPB180N06S4H1ATMA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins	7
Weight	1.59999g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	21900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	180A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain to Source Breakdown Voltage	60V
Height	4.57mm
Length	10.31mm
Width	9.45mm
RoHS Status	ROHS3 Compliant