IXTR210P10T

new-10%

Manufacturer part number:IXTR210P10T

Manufacturer:IXYS

Description:MOSFET P-CH 100V 158A ISOPLUS247

Case Package:SOT-23

Datasheet:IXTR210P10T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	TrenchP™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	595W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 105A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	69500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	740nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Continuous Drain Current (ID)	195A
Drain Current-Max (Abs) (ID)	158A
Drain-source On Resistance-Max	0.008Ohm
Pulsed Drain Current-Max (IDM)	800A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	ROHS3 Compliant