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IPB65R190CFDAATMA1

IPB65R190CFDAATMA1

IPB65R190CFDAATMA1

Infineon Technologies

MOSFET N-CH TO263-3

SOT-23

IPB65R190CFDAATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101, CoolMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 151W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 700μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 100V
Current - Continuous Drain (Id) @ 25°C 17.5A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 17.5A
Max Dual Supply Voltage 650V
Input Capacitance 1.85nF
Rds On Max 190 mΩ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $2.12150 $2.1215

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