IPD50R650CEATMA1

new-10%

Manufacturer part number:IPD50R650CEATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N CH 500V 6.1A PG-TO252

Case Package:SOT-23

Datasheet:IPD50R650CEATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	CoolMOS™ CE
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	69W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	650m Ω @ 1.8A, 13V
Vgs(th) (Max) @ Id	3.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	342pF @ 100V
Current - Continuous Drain (Id) @ 25°C	6.1A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	13V
Vgs (Max)	±20V