IPG16N10S461ATMA1

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Manufacturer part number:IPG16N10S461ATMA1

Manufacturer:Infineon Technologies

Description:IPG16N10S461ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPG16N10S461ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	29W
Terminal Form	FLAT
Reach Compliance Code	not_compliant
Pin Count	8
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	3 ns
Power - Max	29W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	61m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	3.5V @ 9μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Rise Time	1ns
Turn-Off Delay Time	5 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.061Ohm
Pulsed Drain Current-Max (IDM)	64A
Avalanche Energy Rating (Eas)	33 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Feedback Cap-Max (Crss)	20 pF
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

Quantity	Unit Price	Ext. Price
5,000	$0.35789	$1.78945
10,000	$0.34463	$3.4463
25,000	$0.33740	$8.435

IPG16N10S461ATMA1 Description

Thanks to innovative production techniques, the Fifth Generation HEXFETs from International Rectifier feature an extraordinarily low on-resistance per silicon area. Thanks to the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, the designer now has a highly reliable and durable device for use in a variety of applications. The footprint area of the new Micro8 package, which is half that of the conventional SO-8, is the smallest of any SOIC design. The Micro8 is the ideal tool because printed circuit board space is limited in many applications. Because of its compact profile, the Micro8 will easily fit into extremely small application environments like portable devices and PCMCIA cards (1.1mm).