SI5517DU-T1-GE3

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Manufacturer part number:SI5517DU-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 20V 6A CHIPFET

Case Package:SOT-23

Datasheet:SI5517DU-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Max Power Dissipation	8.3W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI5517
Pin Count	8
JESD-30 Code	R-XDSO-C6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.3W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A
Gate Charge (Qg) (Max) @ Vgs	16nC @ 8V
Rise Time	35ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	55 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	7.2A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.039Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	3mm
Width	1.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant