IPI147N12N3GAKSA1

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Manufacturer part number:IPI147N12N3GAKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262

Case Package:SOT-23

Datasheet:IPI147N12N3GAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	107W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	107W
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14.7m Ω @ 56A, 10V
Vgs(th) (Max) @ Id	4V @ 61μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3220pF @ 60V
Current - Continuous Drain (Id) @ 25°C	56A Ta
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	56A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	120V
Pulsed Drain Current-Max (IDM)	224A
Avalanche Energy Rating (Eas)	90 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead