IPI50R350CP

new-10%

Manufacturer part number:IPI50R350CP

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 550V 10A TO-262

Case Package:SOT-23

Datasheet:IPI50R350CP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	89W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	89W
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id	3.5V @ 370μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 100V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	500V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	22A
Dual Supply Voltage	550V
Avalanche Energy Rating (Eas)	246 mJ
Nominal Vgs	3 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free