IPI80P03P4L04AKSA1

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Manufacturer part number:IPI80P03P4L04AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 30V 80A TO262-3

Case Package:SOT-23

Datasheet:IPI80P03P4L04AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	137W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	4.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 253μA
Input Capacitance (Ciss) (Max) @ Vds	11300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+5V, -16V
Drain Current-Max (Abs) (ID)	80A
Drain-source On Resistance-Max	0.007Ohm
Pulsed Drain Current-Max (IDM)	320A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	410 mJ
RoHS Status	RoHS Compliant