IPL65R165CFDAUMA1

new-10%

Manufacturer part number:IPL65R165CFDAUMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 4VSON

Case Package:SOT-23

Datasheet:IPL65R165CFDAUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-PowerTSFN
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	CoolMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	2A (4 Weeks)
Number of Terminations	4
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	195W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	165m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 900μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2340pF @ 100V
Current - Continuous Drain (Id) @ 25°C	21.3A Tc
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	21.3A
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.165Ohm
Pulsed Drain Current-Max (IDM)	67A
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead