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FDB0260N1007L

FDB0260N1007L

FDB0260N1007L

ON Semiconductor

FDB0260N1007L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDB0260N1007L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Weight 1.312g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 3.8W Ta 250W Tc
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8545pF @ 50V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 200A
Threshold Voltage 2.8V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $4.12276 $3298.208
FDB0260N1007L Product Details

FDB0260N1007L MOSFET Description


The FDB0260N1007L N-Channel MOSFET is of high performance and current handling capability. It can do fast switching for load-switch devices. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.



FDB0260N1007L MOSFET Features


RoHS Compliant

High-Performance Trench Technology for Extremely Low RDS(on)

Fast Switching Speed

High Power and Current Handling Capability

Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A

Low Gate Charge



FDB0260N1007L MOSFET Applications


Battery Protection

Industrial Automation

Uninterruptible Power Supplies

Industrial Power Supplies

Industrial Motor Drive

Energy Inverters

Load Switch

Energy Storage


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