FDB0260N1007L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDB0260N1007L Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins
7
Weight
1.312g
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
3.8W Ta 250W Tc
Element Configuration
Single
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.6m Ω @ 27A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8545pF @ 50V
Current - Continuous Drain (Id) @ 25°C
200A Tc
Gate Charge (Qg) (Max) @ Vgs
118nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
200A
Threshold Voltage
2.8V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$4.12276
$3298.208
FDB0260N1007L Product Details
FDB0260N1007L MOSFET Description
The FDB0260N1007L N-Channel MOSFET is of high performance and current handling capability. It can do fast switching for load-switch devices. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
FDB0260N1007L MOSFET Features
RoHS Compliant
High-Performance Trench Technology for Extremely Low RDS(on)