IPP034NE7N3GXKSA1

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Manufacturer part number:IPP034NE7N3GXKSA1

Manufacturer:Infineon Technologies

Description:Single N-Channel 75 V 3.4 mOhm 88 nC OptiMOS? Power Mosfet - TO-220-3

Case Package:SOT-23

Datasheet:IPP034NE7N3GXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	214W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 155μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	8130pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	117nC @ 10V
Rise Time	85ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	75V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	640 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free