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SIJA58DP-T1-GE3

SIJA58DP-T1-GE3

SIJA58DP-T1-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.65m Ω @ 15A, 10V +20V, -16V 3750pF @ 20V 75nC @ 10V PowerPAK® SO-8

SOT-23

SIJA58DP-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 27.7W Tc
Power Dissipation 4.1W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.65m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 20V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 29.3A
Drain to Source Breakdown Voltage 40V
Max Junction Temperature (Tj) 175°C
Height 1.267mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.48052 $1.44156
6,000 $0.45796 $2.74776
15,000 $0.44184 $6.6276
SIJA58DP-T1-GE3 Product Details

SIJA58DP-T1-GE3 Overview


The maximum input capacitance of this device is 3750pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 29.3A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SIJA58DP-T1-GE3 Features


a continuous drain current (ID) of 29.3A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 28 ns


SIJA58DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIJA58DP-T1-GE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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