FQP27P06

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Manufacturer part number:FQP27P06

Manufacturer:ON Semiconductor

Description:FQP27P06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQP27P06 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1999
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	70mOhm
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Current Rating	-27A
Number of Elements	1
Power Dissipation-Max	120W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	120W
Turn On Delay Time	18 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	27A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Rise Time	185ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	90 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	-27A
Threshold Voltage	-4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	-60V
Avalanche Energy Rating (Eas)	560 mJ
Nominal Vgs	-4 V
Height	6.35mm
Length	6.35mm
Width	9.9mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free