ZXMP10A13FQTA

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Manufacturer part number:ZXMP10A13FQTA

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 100V 0.6A SOT23-3

Case Package:SOT-23

Datasheet:ZXMP10A13FQTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	625mW Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	1.6 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 600mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	141pF @ 50V
Current - Continuous Drain (Id) @ 25°C	600mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 5V
Rise Time	2.1ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.3 ns
Turn-Off Delay Time	5.9 ns
Continuous Drain Current (ID)	600mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.5A
Drain-source On Resistance-Max	1Ohm
DS Breakdown Voltage-Min	100V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free