TK2A65D(STA4,Q,M)

new-10%

Manufacturer part number:TK2A65D(STA4,Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 650V 2A TO-220SIS

Case Package:SOT-23

Datasheet:TK2A65D(STA4,Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220SIS
Operating Temperature	150°C TJ
Packaging	Tube
Published	2009
Series	π-MOSVII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	30W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.26Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	7 ns
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	380pF
Rds On Max	3.26 Ω
Radiation Hardening	No
RoHS Status	RoHS Compliant