IPS65R1K0CEAKMA1

new-10%

Manufacturer part number:IPS65R1K0CEAKMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 4.3A TO-251-3

Case Package:SOT-23

Datasheet:IPS65R1K0CEAKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Weight	343.085929mg
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™ CE
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	37W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	6.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 200μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	328pF @ 100V
Current - Continuous Drain (Id) @ 25°C	4.3A Tc
Gate Charge (Qg) (Max) @ Vgs	15.3nC @ 10V
Rise Time	5.2ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13.6 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	4.3A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	1Ohm
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	50 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead