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FQN1N50CBU

FQN1N50CBU

FQN1N50CBU

ON Semiconductor

MOSFET N-CH 500V 380MA TO-92

SOT-23

FQN1N50CBU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 890mW Ta 2.08W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V
Current - Continuous Drain (Id) @ 25°C 380mA Tc
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.277745 $0.277745
10 $0.262024 $2.62024
100 $0.247192 $24.7192
500 $0.233200 $116.6
1000 $0.220000 $220

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